RAYTHEON SEMICONDUCTOR 2N3010 | 搜芯易Sourcengine

RAYTHEON SEMICONDUCTOR 2N3010

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-18
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-18
JESD-609 Code
e0
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
25
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
0.05 A
Power Dissipation-Max (Abs)
0.3 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
6 V
Transition Frequency-Nom (fT)
600 MHz
Collector-base Capacitance-Max
3 pF