2N2326A
SILICON TRANSISTOR CORP
- 生命周期状态Discontinued
- 说明Silicon Controlled Rectifier, 2.512A I(T)RMS, 1.6A I(T), 200V V(DRM), 1 Element, TO-5
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.30.00.80
- SB Code8541.30.00.80
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-5
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Number of Elements1
- Holding Current-Max3 mA
- Leakage Current-Max0.1 mA
- Number of Terminals3
- Trigger Device TypeSCR
- On-state Current-Max1.6 A
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- RMS On-state Current-Max2.512 A
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-65 Cel
- DC Gate Trigger Current-Max0.02 mA
- DC Gate Trigger Voltage-Max0.9 V
- Non-Repetitive Pk On-state Cur15 A
- Repetitive Peak Off-state Voltage200 V
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2N2326A