2N2156
HI-TRON SEMICONDUCTOR CORP
- 生命周期状态Contact Mfr
- 说明Power Bipolar Transistor, 30A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-67
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- JEDEC-95 CodeTO-67
- Surface MountNO
- DLA QualificationNot Qualified
- Number of Elements1
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)80
- Power Dissipation-Max (W)170
- Transistor Element MaterialGERMANIUM
- Collector Current-Max (IC) (A)30
- Operating Temperature-Max (Cel)110
- Collector-emitter Voltage-Max (V)30
- Transition Frequency-Nom (fT) (MHz)0.002
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2N2156