GPD OPTOELECTRONICS CORP 2N1184A | 搜芯易Sourcengine

GPD OPTOELECTRONICS CORP 2N1184A

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
1
Transistor Element Material
GERMANIUM
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
100
Collector-emitter Voltage-Max (V)
30
Transition Frequency-Nom (fT) (MHz)
0.5
Screening Level / Reference Standard
MIL-19500/143B