Fuji Electric Co., Ltd. 2MBI800VG-120P | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 2MBI800VG-120P

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X10
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.19
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
10
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
1200
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
1200