Fuji Electric Co., Ltd. 2MBI200L-120 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 2MBI200L-120

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.5 V
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Additional Feature
HIGH SPEED SWITCHING
Fall Time-Max (tf)
500 ns
Number of Elements
2
Number of Terminals
7
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Collector Current-Max (IC)
200 A
Power Dissipation-Max (Abs)
1600 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V
Power Dissipation Ambient-Max
3200 W