2MBI150N-120
Fuji Electric Co., Ltd.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)3.3
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Fall Time-Max (ns)500
- Number of Elements2
- Number of Terminals7
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1200
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)650
- Turn-off Time-Nom (toff) (ns)850
- Collector Current-Max (IC) (A)150
- Collector-emitter Voltage-Max (V)1200
- Power Dissipation Ambient-Max (W)2400
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2MBI150N-120