Fuji Electric Co., Ltd. 2MBI100J120 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 2MBI100J120

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.2 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
100 A
Power Dissipation-Max (Abs)
640 W
Collector-emitter Voltage-Max
1200 V