2D256M82U4BA9
VERTICAL CIRCUITS INC
- 生命周期状态Discontinued
- 说明DDR2 DRAM, 256MX8, CMOS, PBGA63
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width8 mm
- Length11.5 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B63
- Memory Width8
- Organization256MX8
- Package CodeLFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density2147483648 bit
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words268435456 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.35 mm
- Terminal PositionBOTTOM
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals63
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
2D256M82U4BA9有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
2D256M82U4BA9