INFINEON TECHNOLOGIES AG 2A75HB17C1L | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG 2A75HB17C1L

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.3 V
JESD-30 Code
R-XUFM-X7
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
7
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
260 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
1130 ns
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-40 Cel
Power Dissipation-Max (Abs)
415 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.4 V
Collector-emitter Voltage-Max
1700 V