MSI ELECTRONICS INC 2102 | 搜芯易Sourcengine

MSI ELECTRONICS INC 2102

生命周期状态
Discontinued
说明
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 11pF C(T), 22V, Silicon, Hyperabrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Case Connection
ISOLATED
Terminal Position
AXIAL
Number of Elements
1
Quality Factor-Min
200
Number of Terminals
2
Reverse Current-Max
1.0E-7 uA
Qualification Status
Not Qualified
Reverse Test Voltage
20 V
Breakdown Voltage-Min
22 V
Diode Capacitance-Nom
11 pF
Package Body Material
GLASS
Power Dissipation-Max
0.4 W
Diode Element Material
SILICON
Operating Temperature-Max
175 Cel
Rep Pk Reverse Voltage-Max
22 V
Diode Capacitance Ratio-Min
4.7
Variable Capacitance Diode Classification
HYPERABRUPT