MSI ELECTRONICS INC 1T238-4M | 搜芯易Sourcengine

MSI ELECTRONICS INC 1T238-4M

生命周期状态
Discontinued
说明
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PDSO-L2
Configuration
SEPARATE, 4 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
L BEND
Frequency Band
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
3% MATCHED SET OF FOUR DIODES
Number of Elements
4
Quality Factor-Min
125
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Reverse Current-Max (uA)
0.01
Reverse Test Voltage (V)
10
Breakdown Voltage-Min (V)
12
Diode Capacitance-Nom (pF)
33
Diode Capacitance Ratio-Min
7
Variable Capacitance Diode Classification
ABRUPT