Toshiba Corporation 1SV216TPH3 | 搜芯易Sourcengine

Toshiba Corporation 1SV216TPH3

生命周期状态
Discontinued
说明
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 13.25pF C(T), 30V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Reverse Current-Max (uA)
1.0E-8
Reverse Test Voltage (V)
28
Breakdown Voltage-Min (V)
30
Diode Capacitance-Nom (pF)
13.25
Diode Capacitance Ratio-Min
2.5
Rep Pk Reverse Voltage-Max (V)
35
Operating Temperature-Max (Cel)
125
Variable Capacitance Diode Classification
ABRUPT