Hitachi, Ltd. 1SS277 | 搜芯易Sourcengine

Hitachi, Ltd. 1SS277

生命周期状态
Discontinued
说明
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
Technology
PLANAR DOPED BARRIER
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
Case Connection
ISOLATED
Terminal Position
AXIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Output Current-Max
0.1 A
Number of Terminals
2
Qualification Status
Not Qualified
Diode Capacitance-Max
1.2 pF
Package Body Material
GLASS
Power Dissipation-Max
0.1 W
Diode Element Material
SILICON
Forward Voltage-Max (VF)
1 V
Operating Temperature-Max
125 Cel
Rep Pk Reverse Voltage-Max
35 V