1NM70G-Q-T92-B
UTC, Ltd.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-92
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologySUPERJUNCTION MOSFET
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.6
- Drain Current-Max (ID) (A)1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)700
- Feedback Cap-Max (Crss) (pF)5
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)34
- Pulsed Drain Current-Max (IDM) (A)4
- Drain-source On Resistance-Max (ohm)5.4
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1NM70G-Q-T92-B