1N70G-T92-K
UTC, Ltd.
- 生命周期状态Active
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 1.2A I(D), 700V, 13.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-PBCY-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-92
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)1.6
- Drain Current-Max (ID) (A)1.2
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)105
- DS Breakdown Voltage-Min (V)700
- Feedback Cap-Max (Crss) (pF)25
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)125
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)50
- Pulsed Drain Current-Max (IDM) (A)4.8
- Drain-source On Resistance-Max (ohm)13.5
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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1N70G-T92-K