1N5553US
MICROSS COMPONENTS
- 生命周期状态Active
- 说明Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeRECTIFIER DIODE
- ApplicationGENERAL PURPOSE
- JESD-30 CodeO-LELF-R2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountYES
- Terminal FormWRAP AROUND
- Case ConnectionISOLATED
- Number of Phases1
- Terminal PositionEND
- Additional FeatureLOW LEAKAGE CURRENT
- Number of Elements1
- Number of Terminals2
- Package Body MaterialGLASS
- Diode Element MaterialSILICON
- Output Current-Max (A)3
- Forward Voltage-Max (V)1
- Rep Pk Reverse Voltage-Max (V)800
- Reverse Recovery Time-Max (us)2
- Operating Temperature-Max (Cel)175
- Non-rep Pk Forward Current-Max (A)150
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1N5553US