1N5461A
MSI ELECTRONICS INC
- 生命周期状态Discontinued
- 说明Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeO-LALF-W2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleLONG FORM Meter
- Surface MountNO
- Terminal FormWIRE
- Frequency BandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
- Case ConnectionISOLATED
- Terminal PositionAXIAL
- Additional FeatureHIGH Q
- Number of Elements1
- Quality Factor-Min600
- Diode Cap Tolerance10 %
- Number of Terminals2
- Reverse Current-Max2.0E-8 uA
- Qualification StatusNot Qualified
- Reverse Test Voltage25 V
- Breakdown Voltage-Min30 V
- Diode Capacitance-Nom6.8 pF
- Package Body MaterialGLASS
- Power Dissipation-Max0.4 W
- Diode Element MaterialSILICON
- Operating Temperature-Max175 Cel
- Rep Pk Reverse Voltage-Max30 V
- Diode Capacitance Ratio-Min2.7
- Variable Capacitance Diode ClassificationABRUPT
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1N5461A