KNOX SEMICONDUCTORS INC 1N5139B | 搜芯易Sourcengine

KNOX SEMICONDUCTORS INC 1N5139B

生命周期状态
Transferred
说明
Variable Capacitance Diode, 6.8pF C(T), 65V, Silicon
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
O-LALF-W2
Configuration
SINGLE
Package Shape
ROUND
Package Style
LONG FORM Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
AXIAL
Number of Elements
1
Quality Factor-Min
350
Number of Terminals
2
Package Body Material
GLASS
Diode Element Material
SILICON
Diode Cap Tolerance (%)
2
Reverse Current-Max (uA)
0.02
Reverse Test Voltage (V)
55
Breakdown Voltage-Min (V)
65
Power Dissipation-Max (W)
0.4
Diode Capacitance-Nom (pF)
6.8
Diode Capacitance Ratio-Min
2.7
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-65