UTC, Ltd. 1N40G-T92-B | 搜芯易Sourcengine

UTC, Ltd. 1N40G-T92-B

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 1.4A I(D), 400V, 5.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-92
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
1.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
400
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Avalanche Energy Rating (Eas) (mJ)
85
Pulsed Drain Current-Max (IDM) (A)
5.6
Drain-source On Resistance-Max (ohm)
5.8
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED