Fuji Electric Co., Ltd. 1MBI50L-060 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 1MBI50L-060

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.5 V
JESD-30 Code
R-XUFM-X3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Fall Time-Max (tf)
350 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Collector Current-Max (IC)
50 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Power Dissipation Ambient-Max
200 W