1MBI400L-120
Fuji Electric Co., Ltd.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max3.5 V
- JESD-30 CodeR-XUFM-X5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Additional FeatureHIGH SPEED SWITCHING
- Fall Time-Max (tf)500 ns
- Number of Elements1
- Number of Terminals5
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Collector Current-Max (IC)400 A
- Power Dissipation-Max (Abs)2600 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
- Power Dissipation Ambient-Max2600 W
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1MBI400L-120