Fuji Electric Co., Ltd. 1MBI1200UE-330 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 1MBI1200UE-330

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X9
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.66
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
3
Number of Terminals
9
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
14.7
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
3400
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
2400
Collector Current-Max (IC) (A)
2000
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7.5
Collector-emitter Voltage-Max (V)
3300