1MBI1200U4C-120
Fuji Electric Co., Ltd.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.25 V
- JESD-30 CodeR-XUFM-X7
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)3100 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1450 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)1200 A
- Power Dissipation-Max (Abs)7350 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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1MBI1200U4C-120