Fuji Electric Co., Ltd. 1MBH60-100 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 1MBH60-100

生命周期状态
Contact Mfr
说明
TRANS IGBT MODULE N-CH 1000V 60A
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.6 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Fall Time-Max (tf)
850 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
260 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
2 V
Collector-emitter Voltage-Max
1000 V
Power Dissipation Ambient-Max
260 W