Fujitsu Limited 1MBH50D-060 | 搜芯易Sourcengine

Fujitsu Limited 1MBH50D-060

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 82A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
82 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V