Fuji Electric Co., Ltd. 1MBH05D-120 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 1MBH05D-120

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Fall Time-Max (tf)
500 ns
Number of Elements
1
Rise Time-Max (tr)
600 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Nom (ton)
270 ns
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
115 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
8.5 V
Collector-emitter Voltage-Max
1200 V