Fuji Electric Co., Ltd. 1MBG10D-60 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 1MBG10D-60

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW SATURATION VOLTAGE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
160
Turn-off Time-Nom (toff) (ns)
300
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600