Fuji Electric Co., Ltd. 1MBG05D-060 | 搜芯易Sourcengine

Fuji Electric Co., Ltd. 1MBG05D-060

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Fall Time-Max (tf)
350 ns
Number of Elements
1
Rise Time-Max (tr)
600 ns
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
160 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
300 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
13 A
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
8.5 V
Collector-emitter Voltage-Max
600 V