Toshiba Corporation 1J4B1 | 搜芯易Sourcengine

Toshiba Corporation 1J4B1

生命周期状态
Active
说明
Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon
类别
Semiconductors Diodes Bridge Rectifier Diodes BRIDGE RECTIFIER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
BRIDGE RECTIFIER DIODE
JESD-30 Code
O-PBCY-W4
Configuration
BRIDGE, 4 ELEMENTS
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Number of Phases
1
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
4
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Output Current-Max (A)
1.5
Forward Voltage-Max (V)
1.2
Reverse Current-Max (uA)
400
Reverse Test Voltage (V)
600
Rep Pk Reverse Voltage-Max (V)
600
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Non-rep Pk Forward Current-Max (A)
55