International Rectifier Corporation 19MT050XF | 搜芯易Sourcengine

International Rectifier Corporation 19MT050XF

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 31A I(D), 500V, 0.25ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-P16
Configuration
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
16
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1000
Drain Current-Max (ID) (A)
31
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
493
Pulsed Drain Current-Max (IDM) (A)
124
Drain-source On Resistance-Max (ohm)
0.25