UTC, Ltd. 17P10G-HC-TF3-T | 搜芯易Sourcengine

UTC, Ltd. 17P10G-HC-TF3-T

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 17A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
42
Drain Current-Max (ID) (A)
17
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
130
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
135
Pulsed Drain Current-Max (IDM) (A)
68
Drain-source On Resistance-Max (ohm)
0.15