NEW ENGLAND SEMICONDUCTOR 1130B | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR 1130B

生命周期状态
Transferred
说明
Power Bipolar Transistor, 2A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XUUC-N2
Configuration
SINGLE
Package Shape
SQUARE
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
2
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
10
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
2
Collector-emitter Voltage-Max (V)
350
Transition Frequency-Nom (fT) (MHz)
20